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Q. Basic working of Star Topology?
In Star topology, all user nodes are connected to central node point that interconnects all individual users links and nodes. Data flows from one node, through star centre to desired receiving node. Central node is like a large switch which routes the data from the input line to the output line. Advanced central nodes can have multiple switching paths, so many paths exist at the same time. This topology is used in a telephone system central office. Addition of a new user node requires running just a single link from the star centre to user without disturbing any other node.
Configured dual processor architecture In centralized SPC, dual processor architecture can be configured to operate in following one of three modes: 1. Standby mode: In
Direct and Indirect Semiconductors 1) In a common quantitative calculation of band structures, the wave function of a single electron traveling by a perfectly periodic lattice
Literature Review - Software Defined Radio In this section, first two methods to estimate signal to noise ratio (SNR) are reviewed and a few methods for modulation classificati
Define some Huntington postulates - Boolean Algebra? Postulates 1. Commutative Law (a) A + B = B + A (b) A B = B A 2. Distributive Law (a) A (B + C) = A B + A
what is resolution
Q. If an analog message that has a spectral extent of 15 kHz is sampled at three times the Nyquist rate, determine the sampling rate.
Power Distribution You will study about the legislative measures that have been taken by our government to address these challenges. In particular, we discuss the Energy Conse
a. Describe what you understand by 'offset voltage' and 'offset current' of op-amp. Discuss with a neat circuit diagram the method used for minimizing offset voltage and offset cu
Q. J and K are the external inputs to the JKFF shown in Figure. Note that gates 1 and 2 are enabled only when the clock pulse is high. Consider the four cases of operation and expl
Simulation of a pn Junction An n + p junction is fabricated on a p-type silicon substrate with N A = 8×10 15 cm -3 . The n+ region has a concentration of N D = 1.5×10 18
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