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It has been known for a thousand years or more (originating in China) that certain (magnetic) materials would always orientate themselves in a particular direction if suspended to rotate freely. The very earliest experiments in magnetism were done with these materials (permanent magnets) and these clearly showed that two pieces of these materials were able to exert some force at a distance. This force is analogous to gravitational force. We know from our own experience that it exists. Physicists theorise on the causes whilst engineers are more concerned with being able to measure the practical effect and put it to use by devising a suitable method of analysis.Very early experiments by Oersted and Ampere showed that a current carrying conductor also had an effect on magnetic material in its vicinity. Magnetic compasses placed near to a current carrying conductor were deflected. He also found that the direction of deflection depended on the position relative to the wire. Those above the wire were deflected in the opposite direction to those placed below. Ampere quantified the strength of this force in terms of the current and the distance involved. In order to be able to relate these observations to analysis, the concept of a magnetic field was introduced.The presence of a magnetic field may be visualised by drawing imaginary continuous lines of 'magnetic flux', the density of which is a measure of the strength of the field in a given material. Arrows are added to the flux lines to indicate the direction of the magnetic field, from which the direction of the force it produces on, for example, compass needles and current carrying conductors can be deduced. Convention has it that the magnetic field strength is denoted by the symbol H (ampere.turns), whilst magnetic flux density is given the symbol B (Webers/m2).
What is Inductor Inductor, also known as a choke, is another passive type electrical component designed to take benefit of this relationship by forming a much stronger magnetic
Cross Section of NMOS with Channel Formed: ON state A metal-oxide-semiconductor field-effect transistor (MOSFET) is based upon the modulation of charge concentration through a
Consider the common-emitter BJT circuit shown in Figure (a). The static characteristics of the npn silicon BJT are given in Figure (b) along with the load line. Calculate iB for v
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Importance of Microprocessor Now few questions may arise in one mind that when advance processor like Pentium IV are available in market why we are learning 8035 mic
Q. Considering the circuit shown in Figure, sketch v(t) and the energy stored in the capacitor as a function of time.
Role of Bureau of Energy Efficiency The role of the Bureau of Energy Efficiency is to: Ready standards and labels of appliances and equipment; Develop a list
Explain briefly the operation, draw the functions, formulas and observations. (i) Write an m-file "imnorm.m" which takes an image finds min and max values and uses them to nor
For the circuit of Figure, given that V CC = 5V, R C = 1k, β = 100, and the high range is 4 to 5 V, choose R B such that any high input will saturate the transistor with the ba
Zero Flag Since results is non zero in this example zero flag is reset.
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