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It has been known for a thousand years or more (originating in China) that certain (magnetic) materials would always orientate themselves in a particular direction if suspended to rotate freely. The very earliest experiments in magnetism were done with these materials (permanent magnets) and these clearly showed that two pieces of these materials were able to exert some force at a distance. This force is analogous to gravitational force. We know from our own experience that it exists. Physicists theorise on the causes whilst engineers are more concerned with being able to measure the practical effect and put it to use by devising a suitable method of analysis.Very early experiments by Oersted and Ampere showed that a current carrying conductor also had an effect on magnetic material in its vicinity. Magnetic compasses placed near to a current carrying conductor were deflected. He also found that the direction of deflection depended on the position relative to the wire. Those above the wire were deflected in the opposite direction to those placed below. Ampere quantified the strength of this force in terms of the current and the distance involved. In order to be able to relate these observations to analysis, the concept of a magnetic field was introduced.The presence of a magnetic field may be visualised by drawing imaginary continuous lines of 'magnetic flux', the density of which is a measure of the strength of the field in a given material. Arrows are added to the flux lines to indicate the direction of the magnetic field, from which the direction of the force it produces on, for example, compass needles and current carrying conductors can be deduced. Convention has it that the magnetic field strength is denoted by the symbol H (ampere.turns), whilst magnetic flux density is given the symbol B (Webers/m2).
Q. The energy stored in a 2-µF capacitor is given by w c (t) = 9e -2t µJ for t ≥ 0. Find the capacitor voltage and current at t = 1s.
Q. What is the Voltage controlled resistance region? In this region the JFET can actually be employed as a variable resistor whose resistance is controlled by the applied gate
Tri State Devices Tri State devices have three states logic 1 logic 0 and high impedance. A tri state device ( Buffer/ Inverter) has three lines output enable as shown
up-down counter
Q. Assuming the diode to obey I = IS (e V/0.026 -1), calculate the ratio V/I for an ideal diode with I S = 10 -13 A for the applied voltages of -2,-0.5, 0.3, 0.5, 0.7, 1.0, and
Avalanche Breakdown: This type of breakdown takes place when both sides of junction are lightly doped and consequently the depletion layer is large. In this case, the electric
What is extended data output RAM? EDO RAM: A slight modification to the DRAM structure changes the device in an EDO (extended data output) DRAM device. Inside the EDO memory, a
1. Work out the voltage for the following arrangement of 1.5V cells : (to achieve a pass grade, solve problems with cells in series, parallel and series-parallel) 2.
The pre-processing unit is responsible for taking the conditioned output from the heart sensor and generating a binary count during time T1 of this waveform (datain). It will compr
Forward and Reverse-active in Bipolar Junction Transistor: Forward-active (or simply, active): The base-collector junction is reverse biased and base-emitter junction is
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