Analysis of semiconductor devices, Electrical Engineering

Assignment Help:

Analysis of Semiconductor Devices

There are two complementary techniques of studying semiconductor devices:

  1. Via numerical simulation of the semiconductor equations.
  2. Via analytical solution of semiconductor equations.
  • There are a various range of techniques used for device simulation with some of them beginning from the drift diffusion formalism outlined earlier, where as others take a more fundamental approach beginning from the Boltzmann transport equation instead.
  • Generally, the numerical approach provides highly accurate results but needs heavy computational effort as well.
  • The output of device simulation in the type of numerical values for all internal variables needs comparatively larger effort to understand and extract significant relationships among the device characteristics.

 

The electrons in the valence band are not able of acquiring energy from external electric field and therefore do not contribute to the current. This band is not at all empty but may be partially or totally with electrons. On the contrary in the conduction band, electrons are seldom present. But it is probable for electrons to acquire energy from external field and thus the electrons in these bands contribute to the electric current. The forbidden energy gap is devoid of any of the electrons and this much energy is needed by electrons to jump from valence band to the conduction band.

Other words, in the case of conductors and semiconductors, like the temperature increases, the valence electrons in the valence energy move from the valence band to conductance band. Like the electron (negatively charged) jumps from valence band to conductance band, in the valence band there is a left out deficiency of electron that is called Hole (positively charged). Depending upon the value of Egap that is energy gap solids can be categorized as metals (conductors), insulators and semi conductors.


Related Discussions:- Analysis of semiconductor devices

Auxiliary carry fla - registers, Auxiliary Carry Fla - Registers If ca...

Auxiliary Carry Fla - Registers If carry  is generated  from D 3   to D 4 in the accumulator after any arithmetical or logical  operations. Auxiliary  carry flag (AC) is set

Give the principle of biasing a fet amplifier, Q. Give the principle of bia...

Q. Give the principle of biasing a FET amplifier. To correctly bias the FET, the gate needs to be negative with respect to the source. Bias is obtained in the following manner:

Comparison of induction and dielectric heating , Comparison  of Induction ...

Comparison  of Induction and Dielectric Heating After  studying the induction and  dielectric  heating  followings  points  may consider for  comparison  between  induction an

Detection and handling of gas leakage, Detection and Handling of Gas Leakag...

Detection and Handling of Gas Leakage : If you are using a toxic gas or have a store for it you must have some devices to indicate the leakage, if any. Though numerous monitoring

Inr increment instruction, INR (Increment )  Instruction This  instruct...

INR (Increment )  Instruction This  instruction is used to  increment  the contents  of any  register or memory  location by one. There  are two  format.

Properties of carbon and tungsten in lamp, explain the proprty and the appl...

explain the proprty and the application of carbon and tungsten in lamp?

What is polyphase induction machine performance, Q. What is Polyphase Induc...

Q. What is Polyphase Induction Machine Performance? Some of the important steady-state performance characteristics of a polyphase induction motor include the variation of curre

Magnetic Circuits:, A circular ring of magnetic material has a mean length ...

A circular ring of magnetic material has a mean length of 1m and a cross sectional area of .001m^2.A sawcut of 5mm width is made in the ring . calculate the magnetizing current req

Exponentially weighted moving average, 1. The Excel file contains daily clo...

1. The Excel file contains daily closes for the S&P/TSX composite index from January 2, 2008 to December 31, 2010. Assuming that December 31, 2010 is the current day. A) Using the

Write Your Message!

Captcha
Free Assignment Quote

Assured A++ Grade

Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!

All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd