Would si doped with arsenic be useful in the applications

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Reference no: EM13281186

A semiconductor device requires n-type material; it is to be operated at 400K
a) would Si doped with 10^15 atoms/cm^3 of Arsenic be useful in this applications
b) Could Ge doped with 10^15 cm^-3 antimony be used?

Reference no: EM13281186

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