Would changing it or sr improve the dop

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A SiO2 layer is deposited by LPCVD over a single 1-nm-wide. 0.5-p.m-high metal line.

The deposition flux and time are such that 0.25 µm of SiO2 would be deposited on a flat surface.

The sticking coefficient for this process is 0.01 and the arrival angle distribution parameter n is equal to 1.

Very conformal deposition is obtained, but the DOP is 0. Would changing it or Sr improve (increase) the DOP? Explain.

Reference no: EM131794425

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