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a. In a particular etch process, if selectivity is the biggest concern, which type(s) of etch equipment should be used?
b. If the biggest concern is ion bombardment damage, which typo Ns, of etch equipment should be used?
c. If the biggest concern is obtaining vertical sidewalls, which type(s) of etch equipment should be used?
d. If the biggest concerns are selectivity and vertical sidewalls. which type(s) of etch equipment should be used?
e. What about selectivity and vertical sidewalls and damage, while maintaining reasonable etch rate?
I have an assignment to write a code for rasberry pi. I need to boot up the rasberry pi I have and send information to be displayed on an LED board. I would need help in assigining the pins and booting the machine by tomorrow.
create a use-case diagram for the crm system following the uml guidelines in appendix a of the textbook.doc sharing
What are the special requirements of a patent drawing? What kinds of information are included in an assembly drawing? Describe the drawing revision process.
Digital Signal Processing (ELEC 0316) - Calculate the impulse response h[n] of the system and verify the output with matlab program.
The jet engine in Fig admits air at 20°C and 1 atm at (1), where A1 = 0.5 m2 and V1 = 250 m/s. The fuel-air ratio is 1:30. The air leaves section (2) at 1 atm, V2 = 900 m/s, and A2 = 0.4 m2. Compute the test stand support reaction Rx needed.
The pavement has a 10-year design life, a reliability of 85%, an overall standard deviation of 0.30, drainage coefficients of 1.0, an initial PSI of 4.7, and a TSI of 2.5. What is the minimum acceptable soil resilient modulus?
State reasons for the popularity of decline mining in modern operations. What factors need to be taken into account in deciding the cut off depth beyond which shaft operations should be used instead of decline access.
Measure (and record) the resistances of each of your resistors using the multimeter. Determine the emitter current. Determine the DC current gain of this circuit.
Consider MOS transistors fabricated in a 65-nm process for which μnCox = 470 μA/V2, μpCox = 190 μA/V2, Vtn =-Vtp = 0.35 V, and VDD =1 V. Find Ron of an NMOS transistor with W/L = 1.5.
It is obvious that you have a top-surface understanding of scientific and electrical engineering principles and a well-developed capacity for technical analysis based on your bachelor degree record. You presented the proficient application technic..
Determine the magnitudes of the components of force F = 400 N acting parallel and perpendicular to segment BC of the pipe assembly.
Electromagnetic Fields (ELEC 20003) Determine the total electric flux passing through that portion of the sphere r=78 cm bounded by0
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