Which cvd system would you recommend using a cold-walled

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For CVD deposition of a film, it is found that the mass transfer coefficient h_G = 10 cm sec^-1 and the surface reaction rate coefficient k_s = 1 X 10⁷ exp(-1.9 eV/kT) an sec^-1.

For a deposition at 900°C, which CVD system would you recommend using:

(a) a cold-walled, graphite susceptor type: or

(b) a hot-walled, stacked wafer type? Explain your answer.

Reference no: EM131794372

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