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Some student asked me whether the m0 (rest mass of electron) shall be in the denominator in HW1-1 (a), so the question is to prove following.
Δω = ω - ω' = hk2/2(1/me + 1/mh)
Stoke effect of semiconductor
Consider a direct bandgap semiconductor is excited by a laser light with photon energy hw. Since the excitation is weak, most of the carriers will relax to the band edge and recombine to generate PL with photon energy hω'.
(a) Show that:
(b) Consider GaN (E0 = 3.45eV) is excited by He-Cd laser (λ = 325 nm). The effective mass of electrons and holes are 0.2m0 and 1.2m0, respectively. What's the allowed k for excitation?
Please express kin the unit of nm-1.
(c) What's the amount of wavelength Stoke shift between excitation source and the PL peak in nm?
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