What value of vds puts the device at the edge of saturation

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An NMOS device has parameters V_TN=0.8V, L=0.8µm, and k_n^'=120µA/V^2. When the transistors is biased in the saturation region with V_GS=1.4V, the drain current is I_D=0.6mA. A) What is the channel width W? B) Determine the drain current when V_DS=0.4V. C) What value of V_DS puts the device at the edge of saturation?

Reference no: EM13285791

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