Reference no: EM131308806
Assignment
Provide your perspective (~400 -500 words/ ~ 1 page [ no hard limit ]) on the potential value that anytwo of the following three new memory technologies, Phase Change Memory (PCM-RAMs), Spin-Transfer Torque RAMs (STT-RAMs), and Resistive RAMs (ReRAMs), add to the more mature memorytechnologies (SRAM and DRAM) studied in the lecture. Provide discussion on topics including, butnot limited to:
- What new features are enabled by these memories (compared to SRAM/DRAM)? More broadly,describe what the two technologies (of the three above ) that you've picked are, and how they fitinto the existing memory landscape of FLASH, SRAM, DRAM, etc.
- Which companies are engaged in their fabrication and design?
- What are end-use products that could benefit from such new technologies (e.g. for the abovecompanies or researchers, are there any envisioned products or application areas - if so, why arethese technologies well-suited to these areas)?
- Reviewing the current information on these technologies, what use case did you find mostinteresting?
- Please remember to include relevant reference sources (URLs+dates are fine for web-basedresources. For scholarly works, use any normal citation format) for your discussion at the end.
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