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A point charge of 500π [nC] is located at the origin, an infinite uniform line charge with density of 18π[nC/m] lies along the z axis, and a uniform surface charge density of 2 [nC/m2] lies on all the z = 0 plane.(a) Calculate the electric flux density vector D at the points A(0,3,4) and B(0,3,- 4).(b) What is the total electric flux leaving the surface of a sphere of unit radius centered at the origin?(c) Assuming that free space exists everywhere, determine the force applied on a test point charge of 2ε[C] located at the point A(0,3,4), where ε is the permittivity of free space.
a. Write a Verilog code for a 2 to 1 Mux using gate-level structural level description. The two data input is D0 and D1, control input is C and output is Q. b. Write a Verilog code for a 2 to 1 Mux using behavioral level description.
A silver-coated sphere of radius 5 cm carries a total charge of 12 nC uniformly distributedon its surface in free space. (a)Calculate |D| on the surface of the sphere and (b)external to the sphere
Calculate the length and the distance coved by the lightening arrestor to be installed above 20 feet height industrial building.
A medium wave antenna mast is 50 m high and is operating at 1 MHz with a top loading the effective height is equal to 45 meters. with input power = 100 Kw , find the input current given that the ground resistance = 2.5 ohm .
A sinusoidal voltage source is zero at t = 0.2 microseconds and is "going positive" at that point, meaning that v(t') > 0 for t' = 0.21 microseconds. Furthermore, the voltage at t = 0 is -28 milliVolts and its next zero is at t = 8.2 microseconds
Evaluating Coding Gain, CNR, and BER of a DSSS-CDMA Transmitter, a. A DSSS-CDMA transmitter sends message signals at a rate of 5.0 kbps using a long chip sequence with a rate of 1 M chips per second. In the receiver, what is the processing gain (a..
During four consecutive clock pulses, a sequence of four values of the w is applied. Derive a state table for the FSM that produces z = 1 when it detects that either the sequence w: 0010 or w: 1110 has been applied; otherwise, z = 0.
The fault level at the grid connection point is 1000 MVA. What will now be the required rating of circuit breakers connected to the busbars?
A Si sample is uniformly doped with phosphorus at 5 E 16 cm^-3. We make a p-n junction by implanting boron atoms into the surface layer. The implanted depth is 0.15 µm. What should the surface concentration of the boron implant
Describe why the intrinsic carrier concentration changes with temperature. This would include from very cold temperatures to 600K+ temperatures. Why does an extrinsic semiconductor become intrinsic above ~ 500K
The specific heat capacity of glass is 840 J/(kg · C°). When identical amounts of heat are supplied to each, the glass bar reaches a temperature of 90 °C, while the other bar reaches 290.0 °C. What is the specific heat capacity of the other substa..
Sketch the unit step response of the system below. Show the magnitude of the steady state on the c(t) axis of your response curve and the value of the time constant on the t axis. T(s)=C(s)/R(s)=5/s+2.5
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