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A constant current source of 2 mA is placed across a fully discharged capacitor of 100 F. In the time period before the capacitor reaches breakdown voltage, what is the time rate of change of voltage across the capacitor in V/s?
Is the second law satisfied? Will this refrigerator still satisfy the second law if its coefficient of performance is 6?
Find the complex impedance of the inductance. Find the phasor voltage and current, and construct a phasor diagram. Write the current as a function of time. Sketch the voltage and current to scale versus time. State the phase relationship between t..
Consider a series RLC circuit disconnected from a source at t=0. The circuit components are R=3 ohms, C = 500 F, and L = 1 H. We assume that Vc(0-) = 20 V and i(0-) = -0A. a) Find the natural reponse i(t) for t > 0.
Sketch the Capacitance-Voltage characteristics for both devices based on part (d) by giving appropriate labeling to the voltage and capacitance axis. You may assume high f measurements.
Which sample produces greater Hall voltage: long and narrow or short and wide Thickness (d) is same in both the cases. With little explanations please. 1) If the concentration of scattering centers increase in the semiconductor, would it increase o..
Determine the coefficients p, q, and the determinant (delta) of the system: y1'=y1 + 10y2 Y'2=7y1 - 8y2 Based on these values, what is the type and stability of the critical point
1.Convert 5EDA into binary number. What makes base 16 (Hexadecimal) an attractive numbering systems for representing values in computers 2. What is 4365 - 3412 when these values represent unsigned 12-bit octal numbers
A three-phase steam-turbine synchronous generator is connected to an infinite bus. The generator excitation current is IF=1000 A at the time of synchronization with the bus. The generator has a synchronous reactance of Xs =1.5 per unit.
Two Random variables have a joint probability distribution function defined by F(x,y)=0 X 1y>1 A). Sketch this distribution function. B). Find the joint probability density function and sketch it.
Consider a p-type semiconductor substrate with Na =10^15 cm^-3. A region of heavily p+ doped material is formed by ion implantation as shown in the sketch below.Derive an expression for the built-in voltage under equilibrium conditions.
A particular diode was measured to have VD = 0.62 V at ID = 5.895 mA. Determine the following: a) the reverse saturation current IS. b) VD for a forward current of 100 mA. Assume VT = 25 mV.
A linear-phase FIR filter should be designed with the ideal magnitude response shown in Figure 1 which represents an narrow band-pass filter. The lower cutoff frequency, fL , is 2,000 Hz, and higher cutoff frequency, fH , is 3,600 Hz.
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