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Question: What is the thevenin theorem or steps
Two dc motors are compared. the first one is a 4hp dc motor which draws a current or 0.7A when the field is connected to a 150V source. the second, a 600 hp motor draws a field current of 5A when the field is connected to a 300V dc source.
have a wheatstone bridge with two capacitors and two resistor with one capacitor unknown need to find the value of
An ideal one sided silicon n+p junction has uniform doping on both sides of the abrupt junction. The doping relation is Nd=50Na. the built in potential barrier is Vbi=0.752 V. the maximum electric field in the junction is Emax=1.14*10^5 V/cm for a..
If a very short, 10 V pulse is launched at the input, calculate the time it will take for the pulse to return to the input and voltage be.
At a point f in the system, there is an open-circuit fault on phase-a with a voltage across the open-circuit as Vfa , whereas Vfb =Vfc =0. Similar to the calculations of the short-circuit currents by making use of the sequence networks
how to calculate theoretical range when measuring resistance with DMM (amprobe-AM530) how to adjust the tektronics TBS1104 oscilloscope Time/div to a value of 0.5ms the tektronics only let me adjust between o and 1 ms, but nothing in between.
The pairwise error probability analysis for the i.i.d. Rayleigh fading channel has led us to the product distance (for time diversity) and generalized product distance (for transmit diversity) code design criteria. Extend this analysis for the i.i..
The current in a circuit is 100mA. Determine what the current will be when the resistance is increased by 100%.
A sign on hte door of a room you are abour to enterreads DANGER 10,000 VOLTS. Knowing that your body reistance ispresently 500 kΩ, should you worry about touching any of the equipment i the room
Compute the map produced by the SOM algorithm, with each neuron in the map being labeled with the particular class most frequently represented by the input points around it.
design a silicon rectifier diode that will have a reverse breakdown voltage of 250v and conduct a forward current of
A Si is doped with 10^14 boron atoms per cm3. For T=300 K and T = 470 K. Determine the position of Ei, compute Ef-Ei, and draw a careful dimensioned energy band diagram for the Si sample. Note for Si Eg=1.1 eV, mp*/mn*=0.71. ni=10^14 cm-3 at 470 K
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