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Question 1 -
(a) For the autotransformer shown below, determine the values of IL, I1, and V1.
(b) If you have a conventional two-winding transformer rated 120 V for each winding, what is the required kVA rating of the transformer in order for it to operate as an autotransformer serving a 50 kVA load at 240 V?
Question 2 -
Two identical single-phase transformers (T1 and T2) are each rated 7200V/480V. They are connected open Y (HV side)/open Δ (LV side) as shown below. VAN = 7200 V at zero degrees and VBN = 7200 at -120 degrees.
(a) Determine the values of Vab, Vbc, and Vca.
(b) If a balanced three-phase load rated 100 kVA is connected to terminals a, b, and c. what is the required kVA rating of each single-phase transformer?
For the circuit of given figure, determine the phase relationship between the following using a dual-trace oscilloscope.
Design a regulated powersupply that will supply 1 A output current with a DC voltage outputof +5V and -12V with a ripple voltage of 0.01 V peak to peak. The designshould provide output short circuit protection.
Design an analog Butterworth lowpass filter that has a 0.25 dB or better ripple at 500 rad/sec and at least 50 dB of attenuation at 2000 rad/sec. Determine the system function in a rational function form. Plot the magnitude response, the log-magni..
Write the switching expression for the burglar alarm that produces a logic 1 (rings a bell) when the safe is moved and the control switch is closed, or when the closet is o pen after banking hours, or when the closet is opened with the control swi..
an amplifier operating from + - 3V supplies provides a 2.2-V peak sine wave across a 100 ohm load when provided with a 0.2-V peak input from which 1.0 mA peak is drawn. The average current in each supply is measured to be 20 mA.
Use the Sobel convolution masks to compute the approximate derivative pixel at the center of each of the 3 × 3 image blocks shown in Figure 9.17. The numbers represent the pixel intensities.
1) For a semiconductor E vs kx near the band edge Ec is given by E=Ec +(h2/16m0)*kx2. Determine the effective mass of electrons in the conduction band. Here m0 is the mass of a free electron.
Design an inverting amplifier with a nominal gain of 4, a gain error of 0:1% and an input impedance of at least 10 k Ω. Determine the minimum op amp gain required here.
Design an npn current mirror for this purpose. Neglect the base curents.
Draw a diagram of the magnitude of the spectrum of the signal, say x(t), at the point right after the high-pass filter.
A thermal oxide of thickness 120 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1050 degreeC, determine the time required to obtain the desired thickness.
State one commonly used device used in ultrasonic transmitters and receivers and - state the advantage of it that suits its choice.
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