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1. How many watts of power are emitted by a 1-cd source?
2. A laser with a 0.03-mrad divergence, 1000 W of power, and 2-cm exit diameter is aimed at the moon (238,000 mi). What is the beam size on the moon? What is the radiation intensity?
Design the system block diagram and one bit cell of a conditional counter which counts only when input count=1?
From the quiescent values, determine the small-signal parameters for Q1 and Q2. - Using nodal analysis, determine the small-signal closed-loop current gain Ai f = io/is.
Design a LR test to choose between the hypotheses
An open container holds ice of mass 0.505 kg at a temperature of -11.0 Celsius . The mass of the container can be ignored. Heat is supplied to the container at the constant rate of 900 J/minute . The specific heat of ice to is 2100 J/kg and the hea..
Two rolled-steel channels are to be welded back to back and used to support the loading shown. Knowing that the allowable normal stress for the steel used is 30 ksi, determine the most economical channels that can be used.
Prove that the ratio of depth to width of the strongest beam that can be cut from a circular log of wood having diameter d is 1.414
How do we determine the overall gain of a cascaded system of AV1, AV2, and AV3 in dB, in absolute What do we do if all the gains are given in dB, absolute and dB
When the beam is not broken, light from the transmitter hits the receiver and turns on the output transistor from the receiver. Their purpose is to detect objects as the objects break the beam. design a through-beam photoelectric sensor
Discuss how p and q can be estimated emperically from a histogram of (simulated) burst length and inter-error gap distributions. Estimate p and q.
For the simple equivalent circuit of 0.017 m2 PV cell shown below, the reverse saturatoin current is I0= 4 * 10-11 A and at an insolation of 1-sun the short circuit current is Isc = 6.4 A. At 25 degrees C
why was the system designed with a 16 dB link margin?
Phosphorous is an n-type dopant in Si since it introduces extra electrons to Si (an P atom has 1 more valence electron than Si). It is widely used in making semiconductor devices (p-n junctions for example).
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