What is the maximum electric field in the junction

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Reference no: EM13274309

An ideal one sided silicon n+p junction has uniform doping on both sides of the abrupt junction. The doping relation is Nd=50Na. the built in potential barrier is Vbi=0.752 V. the maximum electric field in the junction is Emax=1.14*10^5 V/cm for a reverse bias voltage of 10 V. T=300K. Determine (a) Na,Nd (b) xp for Vr=10 and (c) C'j Vr=10.

Reference no: EM13274309

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