What is the maximum applied voltage to the oxide

Reference no: EM131321057

The electron binding energy at an oxide trap is found to be leV and the potential barrier height between the Si and the SiO₂ film grown on Si is 3.1eV. Electrons are slowly injected by tunneling from Si into a trap in the gate oxide of a MOS transistor when +1V is applied to a 100A-thick oxide film on the Si substrate.

Suppose that the integrated circuit using this MOS transistor will fail when 10¹¹electron/cm² are trapped at the oxide electron trap.

How long does it take to fail if there are 10¹² cm^-2 unoccupied traps initially? What is the maximum applied voltage to the oxide for 10-year life?

Reference no: EM131321057

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