What is the expected range of id obtained

Reference no: EM131019299

An NMOS transistor with kn = 0.4 mA/V2 and a nominal Vtn of 0.4 Vis to operate in saturation at ID =0.2 mA.

(a) If Vtn can vary by as much as ±10%, what is the expected range of ID obtained?

(b) If the transistor is used to discharge a 100-fF load capacitance, what is the expected variation in delay time, assuming that the output voltage is to change by 0.1 V?

Reference no: EM131019299

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