What is the duration of the photocurrent if absorption occur

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A Si PIN photodiode has an i-Si layer of width 20 µm. The p+ layer on the illumination side is very thin (0.1µm). The PIN is reverse biased by a voltage of 100 V and then illuminated with a very short optical pulse of wavelength 900 nm. What is the duration of the photocurrent if absorption occurs over the whole i-Si layer?

Reference no: EM13227814

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