Already have an account? Get multiple benefits of using own account!
Login in your account..!
Remember me
Don't have an account? Create your account in less than a minutes,
Forgot password? how can I recover my password now!
Enter right registered email to receive password!
Consider the current it takes to power a +5V 74xx245(Icc). What is the qualitative difference between the CMOS devices and the non-CMOS devices and the non-CMOS devices? What is the explanation for the difference?
In addition, the distance between the components of the exciton is always such that there are intervening semiconductor atoms. Thus e in the Bohr formulation must also be replaced by Ks e0, where Ksis the semiconductor dielectric constant.
A satellite is operated at C-Band (6 GHz in the uplink and 4 GHz in the downlink) for video broadcasting. Calculate the free-space loss experienced at this frequency, if the satellite is in geostationary orbit (GEO), located at 36 000 km above gro..
A coil made of 150 turns of copper wire wounded ona cylindrical coil . If that means radius of the turns in 6.5mm and the diameter of the wire is 0.4mm, calculate the resistance of the coil.
For a single frequency sine wave modulating signal of 3 KHz with a carrier frequency of 36 MHz, what is the spacing between sideband
a particular electric utility charges customers different rates depending on their daily rate of energy consuption 0.05khw up to 20 kwh and 0.1 kwh for all energy usage above 20 kwh in any 24 hour period.
Compute the equilibrium carrier concentrations and the position of the Fermi level with respect to the conduction band edge for a uniformly doped Si region with N_D=1*10^16 cm^-3 and N_A = 1*10^17 cm^-3 at room temperature.
The Y values correspond to an X domain ranging from -3 to 6 with a step size of 0.01. The program must use a function that performs the numerical differentiation method described below to calculate the derivative of the input data and write the re..
Find the electric field of a long line charge at a radial distance where the potential is 12V higher than at a radial distance \(r_{1}=1m\) where the magnitude of the electric field is 5V/m .
Design a counter with JK flip-flops that goes through the following binary repeated sequence: 0, 1, 2. Treat the states 11(3) as don't care condition. Derive the state table, the simplified input equations and draw the logic diagram.
Design a multiplexer which has four input lines, two controllines, and one output line and a demultiplexer which has one input line, two control lines, and four output lines using truth tables and k-maps.
An N-type silicon substrate with the doping density of 1x10 15 cm-3 Arsenic is to be converted into p-type by Boron diffusion, so that the resistivity at T=75C is 5 O-cm. All atoms are fully ionized.
How many years ago was the desired ration of recreation land per 1,000 population exceeded if no more land was acquired and the population continued to grow at the indicated rate
Get guaranteed satisfaction & time on delivery in every assignment order you paid with us! We ensure premium quality solution document along with free turntin report!
whatsapp: +1-415-670-9521
Phone: +1-415-670-9521
Email: [email protected]
All rights reserved! Copyrights ©2019-2020 ExpertsMind IT Educational Pvt Ltd