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A GaAs MESFET has a 0.2 µm thick N-channel doped to Nd = 1017 cm-3. Assume that
(c) Can any gate voltage of the opposite sign to (b) be applied to the gate without producing expression gate current? What is its effect on W depand Ids?
(d) What needs to be done to redesign this MESFET so that its channel is cut off at Vg = 0 and the channel only conducts current at Vg larger than a threshold voltage?
Show all the steps in the mechanism for the following reaction, When benzene is mixed with deuterated sulfuric acid, deuterium is slowly incorporated onto the ring. Show the mechanism for this reaction and explain how this relates the sulfonation of ..
This assignment inhibits chemistry Laboratory Questions.
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