What is device conversion efficiency at maximum power point

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Reference no: EM13227728

At 300K, Si solar cell with area of 100cm^2 has a Voc= 0.6V and Isc of 3.3A under input power Pinput=1kW/m^2. Assuming diffusion dominated behavior and no parasitic resistance elements, what is the device conversion efficiency at the maximum power point?

Reference no: EM13227728

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