What dimensional change can be made to solve the problem

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Reference no: EM13280943

In a particular IC design in which the standard channel length is 2µm, an NMOS device with W/L of 5 operating at 100µA is found to have an output resistance of 0.5MO, about 1/4 of that needed. What dimensional change can be made to solve the problem?

a) What is the new device length?

b) The new device width?

c)The new W/L ratio?

d) What is VA for the standard device in this IC? The new device?

Reference no: EM13280943

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