What are individual drift and diffusion components of hole

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Reference no: EM13252196

given the electron and hole concentrations for a 2 micro meter region of Silicon. At x=0 the concentration of electrons is 10^16 and the concentration of holes is 1.01x10^18. At x=2 micro meters the concentration of electrons is 10^4 and the concentrations of holes is 10^18. This information was given in a picture. In addition, there is a constant electric field of 20 V/cm present in the sample.

What is the total current density at x=0? What are the individual drift and diffusion components of the hole and electron current densities at x=1 micro meter? Assume the electron and hole mobilities are 350 and 150 cm^2/Vxs , respectively.

Reference no: EM13252196

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