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Two MOSFETs are employed as current-bidirectional two-quadrant switches in a bidirectional battery charger/discharger based on the dc-dc buck converter. This converter interfaces a 16 V battery to a 28 V main power bus. The max battery current is 40 A. The MOSFETs have Ron of 35 microOhms. Their body diodes have forward voltage drops of 1.0V and exhibit recovered charge, Qr, of 25 microCoulombs and reverse recovery times, trr, of 200 ns. Assume all diodes have "snappy" reverse recovery characteristics and diode stored charge is dominant cause of switching loss. Neglect all losses other than semiconductor conduction losses and switching loss induced by diode stored charge. 1. Estimate switching energy loss, conduction loss and converter efficiency when battery charged at max rate (f_sw=100kHz). 2. With external diodes added, with forward drops of 1V, Qr of 5 micro-Coulombs, trr of 4 ns, repeat analysis in part 1. 3. Determine range of frequencies the addition of external diodes improves the converter efficiency.
A CB transmitter is rated to supply 4 W of carrier power to a 50 Ohm load while operating from a power supply that provides 13.8 V. The nominal supply current is 1 A without modulation and 1.8 A with 80 % modulation.
How to calculate the transient time need for the simple passive low pass filter Why it needs the time more then 5-Tau (RC) to become a steady state
(a) Determine the steady state error for a unit step input R(s) = 1 / s. (b) Assume that the complex poles dominate, and determine the overshoot and settling time to within 2% of the final value.
For a transformer with a line voltage of 34.5 KV on the primary and a line voltafe of 480V. Calculate Vphase primary and secondary,P,Q, and S for each of the following transformer connections and loads.
Find the spacing between conductors of three phase transmission line with conductors of diameter 2.5 cm to avoid corona which will take place if the linevoltage exceeds 150kV (rms).
a load made up of a 100 ohm resistor in series with a 20 nF capacitor is connected across a 2400V (rms), 60 Hz voltage source. Find the complex power being delivered to the load and the power factor. state whether it is lagging or leading.
Design the base-emitter area of NPN BJT so that its transconductance gain is gm=2 A/V at VBE=0.70 V. The technological parameters are as folows: the emitter is heavily doped, the base doping is 5*1017cm-3,the base width is W=0.5μm
The mobility of electrons in certain semiconductor is 1400 cm2/ (volt x sec). At room temperature (T=300K) calculate the diffusion length of electrons. What are the assumptions used in low-level injection of carriers
Electricity is distributed from electrical substations to neighborhoods at 15,000 Volts, to a transformer on utility poles near homes, where is it stepped down to 120 Volts for household use.
A simple power system consists of a dc generator connected to a load center via a transmission line. The load resistance is 8 ohms. The transmission line is 40km copper wire of 4 cm diameter. If the voltage at the load side is 400 V, compute Volta..
A piece of germanium doped with 1016 cm-3 shallow donors is illuminated with light generating 1015 cm-3 excess electrons and holes. Calculate the quasi-Fermi energies relative to the intrinsic energy and compare it to the Fermi energy in the absen..
We would like to monitor the first two least significant bits of PORTB (use masking technique). Whenever both of these bits are set, switch all LEDs of Port A on for one second. Assume that the name of the delay subroutine is DELAY.
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