The hall-effect is used to determine the mobility of holes

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The Hall-effect is used to determine the mobility of holes in a p-type silicon. Assume the bar resistivity is 20,000 ohm -cm the magnitude of Bz = 0.1 wb / m2, and d = w = 3 mm The measured value of the current and hall voltage are 100 mu A and 100 mV respectively. The hall coefficient RH is (m2 / coulombs).

Reference no: EM13630644

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