The enhancement load transistor in the nmos inverter

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The enhancement-load transistor in the NMOS inverter in given Figure has a separate bias applied to the gate. Assume transistor parameters of Kn = 1 mA/Vfor MD, Kn = 0.4 mA/V2 for ML, and VT N = 1 V for both transistors. Using the appropriate logic 0 and logic 1 input voltages, determine VO H and VO L for:

(a) VB = 4 V,

(b) VB = 5 V,

(c) VB = 6 V, and

(d) VB = 7 V.

57_Figue 2.jpg

Reference no: EM131228082

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