The current of an ideal p-n junction under illumination

Reference no: EM13837368

The current of an ideal p-n junction under illumination can be described by:

J(V)=J0(eqVkT-1)-Jph

where J0 is the saturation-current density, Q the elementary charge, V the voltage, K the Boltzmann's constant,T the temperature and JPH the photo-current density.

A crystalline silicon cell generates a photo-current density of JPH= 35 MA/cm2 at T=300k. The saturation-current density is J0=1.95*10^-10 MA/cm2

Assuming that the cell behaves as an ideal p-n junction, calculate the open-circuit voltage Voc (in V).

Reference no: EM13837368

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