Standard implant problem a what implant energy is

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Reference no: EM13345456

Standard implant problem: a) What implant energy is necessary to make a Boron implant through a 110nm layer of gate oxide if the peak of the implant is supposed to be at the SiO2 surface? b) Sketch the impurity concentration versus depth for Boron implant in part a). What is the implant straggle?

Reference no: EM13345456

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