Selective phosphorus diffusion

Reference no: EM131011355

1. What is the required thickness for a Si02 mask used for selective phosphorus diffusion. The diffusion was performed at 1000 °C for 3 hours.

2. Find the dose in silicon for phosphorus that is implanted wi th an energy of 100 kcV with a 0.1 Lm SiO::, layer and peak concentration of 101 7 cm-3. Fmd the time requ i red for this implantation onto a 2" wafer using 2 µA of current.

Reference no: EM131011355

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