Name at least two strategies to ensure a metal in contact

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Reference no: EM133203271

Answer the following conceptual questions.

(a) Name at least two strategies to ensure a metal in contact with a semiconductor to form Ohmic contacts.

(b) Explain the operating principle of a MOSFET transistor. Why is the substrate of n-type MOSFET transistors grounded and that of p-type MOSFET transistors connected to the power supply?

(c) For a MOS capacitor, explain why the depletion region of a p-type semiconductor will reach the maximum in the strong inversion mode.

(d) As the transistor size scales down, what are the consequences if we choose to reduce the threshold voltage proportionally? If possible, how should we change the subthreshold swing to address the consequences?

(e) How should we design a bipolar junction transistor with good performance (high gain and small Early effect)? Explain why. Don't just list equations.

Reference no: EM133203271

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