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MOS Band Diagrams. Consider four simple cases of the MOS capacitor, all combinations of low gate metal work function (e.g. Al qΦM ≈ 4.05 eV), high gate metal work function (e.g. Pt qΦM ≈ 5.15 eV), n+type silicon and p+type silicon substrate. Assume the substrate is highly doped, such that EF coincides with EC (n+) and EV (p+) respectively. The SiO2 thickness is 2 nm. Please assume silicon electron affinity is qXS = 4.05 eV and band gap is EG = 1.1 eV.
(a) Sketch the four band diagrams across all MOS structures in equilibrium (VG = 0 V).
(b) Sketch the four band diagrams exactly at threshold (VG = VT), as the surface is inverted. Is the threshold voltage VT >0 or <0 in each case?
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