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An inductor of negligible resistance and an inductance of 0.2 H isconnected in series with a 330 O resistor to a 12V d.c. supply.Determine:(a) the time constant of the circuit(b) the voltage drop across the inductor after two time constants(c) the voltage drop across the resistor after three time constants(d) the resistance of a 0.2 H coil used to replace the inductor if thecircuit's time constant falls to 0.55 ms.
A CS amplifier utilizes a MOSFET with UnCox = 400 uA/V^2, W / L = 10, and VA = 10V. It is biased at ID = 0.2mA and uses RD = 6k ohm. Find Rin, Avo, and Ro. Also, if a load resistance of 10k ohm is connected to the output, what overall voltage gain..
Design the circuit so that the voltage at the gate is -12V, the drain current ID is 1 mA, and the drain to source voltage VDS is 4.7V. The JFET must be operating in the saturation region. Use standard 5% tolerance resistors.
The mobility of electrons in certain semiconductor is 1400 cm2/ (volt x sec). At room temperature (T=300K) calculate the diffusion length of electrons. What are the assumptions used in low-level injection of carriers
A CS amplifier using an NMOS with gm = 3.8 mA/V is found to have an overall voltage gain of -16 V/V. What value should a resistance RS inserted in the source lead have to reduce the overall voltage gain to -8 V/V
The respective resistance measurements (from the first bar) are 11.1 kW, 12.1 kW, and 14.5 kW.Find the a) material resistivity and b) contact resistivity, then c) restate the material resistivity as a sheet resistivity.
A GaAs device is doped with a donor concentration of 3e^15/cm^3 . For the device to operate properly, the intrinsic carrier concentration must remain less than 5% of the total electron concentration
Can you write a part of project which is about developing a schedule of power substation on primavera (P6), focusing on the Changes that will happen based on the following:
A uniform electric field exists in the region between two oppositely charged plane parallel plates. An electron is released from rest at the surface of the negatively charged plate and strikes the surface of the opposite plate
Design a two-pole low-pass Butterworth active filter using a unity-gain section to achieve a 3-dB frequency of 200 Hz. Select the two filter resistances as 30 kOhms each.
A) Write the KCL expression for this circuit and set it equal to zero. B) Find the voltage of Vo. C) Use your value of Vo. The final step is to use the inverse phasor-transform operation to transform this value.
If the receiver equivalent noise bandwidth is 65 MHz, and the signal to strength at the antenna connection to the RF band pass filter is 7pW (710-12W), calculate the signal to noise ratio in dB at the receiver output to the demodulator.
Discuss how can identify which resistances are in series and which ones are in parallel in a series-parallel circuit. How might this affect how you measure current and voltages in the circuit with a digital multimeter
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