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Indicate the use of each memory in the microcontroller (HCS12). In other words, state which one is used for code, program variables, and variables that must remain when the power is turned off.
What are the techniques used to make feedback system stable? Explain and draw the frequency response of a 1-pole feedback amplifier.
If designing a computer configuration for use as a workstation for one specific application, what aspects of the software need to be considered as part of the design process?
Determine the magnitude of the current when the machine develops its maximum gross power with the excitation held constant.
A silicon NPN bipolar junction transistor is to be used as an amplifier. What are the required bias conditions for this to occur If the emitter voltage is -3V, pick an acceptable base voltage and an acceptable collector voltage for the transistor ..
Use MATLAB to compute the inverse Laplace transform of X(s)=(s^2+2s+1)/(s(s+1)(s^2+10s+50)) and determine the value of x(t) in the steady state. How would you be able to obtain this value without computing the inverse? Explain.
Bipolar Junction Transistor, A silicon n-p-n bipolar junction transistor is designed with emitter, base and collector doping levels of 10^19cm, 10^15cm and 5*10^17cm, respectively.
A chopper is used to control the power flow from a dc source voltage of 125-V to a battery whose voltage is 240-V. The power transferred is 60 kW. Determine the duty cycle and the average input current.
Dynamic RAM that must be given a refresh cycle 64 times per ms. Each refresh operation requires 150 ns. memory cycle requires 250 ns.
two loads connected in parallel are supplied from a single phase 240v rms source. the two loads draw a total real power of 400 kw at a power factor of 0.8 lagging. one of the loads draws 120 kw at a power factor of 0.96 leading.
For what range of values of a is the system stable?
A junction employs Nd = 8x 10^17cm^-3 and Na= 2 x 10^ 17 cm^-3. The device is at 300K. (a) determine the majority and minority carrier concentrations on both sides (b) Calculate the built-in potential at (i)T=250K (ii)300K
Suppose the RTD of (108.1 Ohms) has a dissipation constant of 25mW/°C and is used in a circuit that puts 8 mA through the sensor. If the RTD (108.1 Ohms) is placed in a bath at 100°C, what resistance will the RTD have
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