In the chemical vapor deposition of silane

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Reference no: EM13283459

In the chemical vapor deposition of silane (SiH4) on a silicon wafer, a process gas stream rich in an inert nitrogen (N2) carrier gas has the following composition:

ySIH4 = 0.0075, yH2 = 0.015, yN2 = 0.9775

The gas mixture is maintained at 900 K and 100 Pa total system pressure. Determine the diffusivity of silane through the gas mixture.

The Lennard–Jones constants for silane are ?A /k = 207.6K and ?A =4.08A0

Reference no: EM13283459

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