In a particular semiconductor device an oxide layer forms

Reference no: EM13625720

In a particular semiconductor device, an oxide layer forms a barrier 0.6 nm wide and 9 eV high between two conducting wires. Electrons accelerated through a 4-V potential approach the barrier.

(a) What fraction of the incident electrons will tunnel through the barrier? Justify any approximations.

(b) Through what potential dierence should the electrons be accelerated in order to increase the tunneling fraction by a factor of 2?

Reference no: EM13625720

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