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1.Explain aluminum migration in device contacts, and propose possible solutions for the aluminum spikes caused by the migration.
2.What are the two methods for the first step of impurity doping? Why a second drive-in step is needed? How the impurity atoms are distributed after the drive-in process?
If a transformer has a turns ratio of 1:5 and a primary voltage of 20 V AC, what will the secondary voltage be?
A PWM is used in 8-bit mode to produce a signal with a 1 msec period and 60% duty cycle. Determine the value required for any pre-scaling, and the values for the period, and duty cycle registers. The E-clock is 24 MHz.
One reason that the maximum electric field is important is because of the possibility of impact ionization, which may be desired or undesired in a particular application. The process of impact ionization is dependent on the electric field
Find the magnitude of the electric field at all points in space both inside and outside the slab, in terms of x, the distance measured from the central plane of the slab. What is the field for x = 1.00 cm What is the field for x = 8.00 cm
a carrier wave is frequency-modulated using a sinusoidal signal of frequency fm and amplitude Am. (a) determine the values of the modulation index beta for which the carrier component of the fm signal is reduced to zero. see the appendix for calcu..
Determine the system fault kVA and the fault currents at the 415 V and 110 V busbars for short circuit faults on the transformer input or output terminals. Work in p.u. values of impedances.
The input to the filter is Vin(t)=5+5cos(1000pi*t)+sin(20000pi*t)+4cos(3000pi*t) V and the output is Vout(t)=5+5cos(1000pi*t+10deg)+5sin(3000pi*t) V.
If you have 16 kibibytes of memory plus a few (less than 10) memory mapped devices (assume that each device uses 16 bytes of address space), what should the address size be
Invesitagtion of Intermodulation through an amplifier, An amplifier is designed to handle frequencies around 9 GHz. The bandwidth of the amplifier is 2 GHz with a center frequency of 9 GHz
Consider an n-Si with doping of 9*10^16cm^-3. In a certain region of this sample, there is an electric field of 1000V/cm. Estimate the electron and hole drift velocity and the total drift current density in that region.
calculate the amout of mmf generated by a coil of wire having 1300 turns and carrying milliamperes of current?
Isc of 3.3A under input power Pinput=1kW/m^2. Assuming diffusion dominated behavior and no parasitic resistance elements, what is the device conversion efficiency at the maximum power point
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