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How do circuits work?
explain and show a diagram.
an electric field of 3.10times105 is desired between two parallel plates each of area 36.0 and separated by 0.620
A given application written in Java runs 15 seconds on a desktop processor. A new Java compiler is released that requires only 0.6 as many instructions as the old compiler. Unfortunately, it increases the CPI (clock cycles per instruction) by 1.1.
A temperature sensor is specified to provide 2 mV/°C. When connected to a load resistance of 10 k ohm, the output voltage was measured to change by 10 mV, corresponding to a change in temperature of 10°C.
digital communication techniques a video signal contains light variations that change at a frequency as high as 3.5
Whether reading consecutive 20 bits from the same wordline would consume about 20 times more energy than reading 1 bit from this wordline. What is the total storage capacity of this DRAM array
What regions in the cerebral cortex are known to be involved in movement? How do these areas contribute to the production of motor behavior?
If the receiver equivalent noise bandwidth is 65 MHz, and the signal to strength at the antenna connection to the RF band pass filter is 7pW (710-12W), calculate the signal to noise ratio in dB at the receiver output to the demodulator.
The current flowing into a particular capacitor is given by the expression I = 6e^(-0.05t) where I is in Amps and t is in seconds. The voltage across the capacitor during the same time period is given by V = 10-10e^(-0.05t) where V is in Volts.
The average output load voltage
A network has an input impedance of 120+100j Ohm what is the capacitance that should be placed in parallel with the network to provide an input impadance with: a) Zero Reactance at w=1000 rad/s b) Zero Reactance at w=2000 rad/s
Design (determine) the metallurgical channel thickness of an n-channel silicon JFET such that the pinch off voltage is -3.0V. The doping parameters are NA=3x1018cm-3 and Nd=2x101616 cm-3.
The concentration of B at the surface of the Si is maintained at a constant level of 1.0 x 1025 m-3; furthermore, it is assumed that the concentration of B in the original Si material is negligible, and that at room temperature the boron atoms are..
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