Solution-Given an nmos with gate dielectric thickness

Given an nmos with gate dielectric thickness

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Reference no: EM131032540

Given an NMOS with gate dielectric thickness Tox = 120A° (SiO2), effective channel mobility µe f f = 1000cm2v-1s-1,channel length L = 15µm, channel width W = 150µm, Si substrate doping NA = 4E16cm-3. Assume Vf b = 0.

(A). Calculate VT .

(B). Create a plot of ID vs VD at various VG levels. For the purpose of practice, please use a plotting softwarefor this part. You can use piecewise functions given by Eqn. 6-49 and Eqn. 6-53 as you go from linear regioninto saturation region.

(C). Calculate the drain saturation current IDSAT at VG = 3V.

(D). Calculate the saturation transconductance gmSAT at VG = 3V.

Reference no: EM131032540

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Given an nmos with gate dielectric thickness

Reference no: EM131032540

Reference no: EM131032540

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