Find vt of the nmosfet when n+ poly-si is used

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Reference no: EM13247987

An nMOSFET and pMOSFET are fabricated with substrate doping concentration of 6x1017/cm3. The gate oxide thickness is 5 nm. (a) Find Vt of the nMOSFET when n+ poly-Si is used to fabricate the gate electrode. (b) Find Vt of the pMOSFET when n+ poly-Si is used to fabricate the gate electrode. (c) Find Vt of the pMOSFET when p+ poly-Si is used to fabricate the gate electrode

Reference no: EM13247987

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