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An electric field is expressed in rectangular coordinates by E = 6x2ax + 6y ay +4az V/m. Find:a.) VMN if point M and N are specified by M(2,6,1) and N(-3, -3, 2).b.) VM if V = 0 at Q(4, -2, -35)c.) VN if V = 2 at P(1,2,4).
Determine whether the follow signals are period and for those that are find the fundamental period. F: x(t) = cos(t)u(t) G: x(t) = v(t) + v(-t) where v(t) = cos(t)u(t) I: x[n] = cos((1/5)(pi)(n)) * sin((1/3)(pi)(n))
(1) What might be an example of an input and an output What are some simple examples of what constitutes the distinction between input into a program and output from the program (2) What type of arithmetic operations are supported in C++
The message signal x(t), in the following system has a nabdwidth of 10kHz. The center frequecy of the Narrow Band Frequency Modulated (NBFM) signal nbfm(f) is 1Mhz, the frequency deviation f1=1khz and the amplitude of the NBFM signal is 1V.
A certain logic family has the following voltage parameters: VIH(min)=3.5V , VIL(max)=1.0V; VOH(min)=4.9V, VOL(max)=0.1V a) What is the largest positive-going noise spike that can be tolerated
Design an IIR filer with the following analog filter specifications, max attenuation in the passband = 2 dB and minimum attenuation in the stopband is 30 dB. Tchebycheff I BPF with passband edge frequencies of 800 Hz and 1600 Hz.
The 8086 Microprocessor Operating Systems and System Interrupt services, Please help me write a program that will display the hex code for any key, or key combination, that is pressed on the keyboard.
Give three advantages of a three-phase system over a single-phase system There are two basic three-phase connections, the wye connection and the delta connection. Draw a labelled diagram showing the wye connection
Phosphorus atoms, at a concentration of 5*10^16 cm^-3, are added to a pure sample of intrinsic silicon. Assume the phosphorus atoms are distributed homogeneously throughout the silicon sample. What is the fraction by weight of phosphorus
a) Compute and plot the magnitude of the DFT for f(t) using "fftshift", assuming a sampling rate of 8000 Hz and a duration of 0.5 second. b) Window the samples of f(t) using a hann window
A pn junction diode has Vd= 690 mv, C=6pF, Id= 500 microamps, Vt=.0259 V. It also has C=4pF when Id= 100 microamps. Derive the complete high-frequency model when Vd=610mV.
Describe the basic operation of the n-channel MOSFET, the relationship to VGS, VDS an IDS. This would include such things as accumulation, inversion, pinch-off point, etc. Which end is the drain
how to determine the sensitivity of junction depth to changes in furnace temperature by calculating (dxj/xj)/(dT/T) for a drive diffusion.
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