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Voltage v(t) = 4e-20tV for t > 0 is input to the circuit. The resultant current i(t) = -1.2e-20t - 1.5 A. The initial inductor current iL(0) = -3.5A. Find the values of the inductance L and the resistance R in the circuit.
The donor distribution of a nonuniformly doped silicon sample can be approximated by N(x) = Noexp(-x/x0), where x0 = 1 µm. As no current flows under the open-circuit condition, a built-in electric field is established
Slots in the broad wall of a rectangular waveguide scatter power symmetrically, so that they can be modeled as a shunt admittance,Y, in a transmission line. Consider the waveguide structure below, with four equally space slots .68 lambda apart
What is the (approximate) maximum electric field intensity for which constant mobility may be assumed for electrons in silicon In a digital circuit with a supply voltage of 1V, what is the corresponding gate length for MOS transistors
Determine the probability distribution of the number of times
describe the characteristics of the series rc filter circuit with the output across the resistive component.
A plumber is using an electric drill in a basement with a concrete floor.Assume his total body resistance from hands to feet is 1k ohm.The drill has a metal case that is connected to the ground wire in the 3-prong plug.
1- If the diameter of a spherical water droplet is 100.0 µm, how much energy is required to increase the diameter of the water droplet by 3.0 µm The surface tension of water is 1.0 x 10-3 J/m2. 2- A metal crystallizes in a face-centered cubic lat..
Evaluate the problems in the appropriate number base's showing your full workings -
The bottom of the conduction band at one end of a silicon resistor is at the same energy level as the top of the valence band at the other end. What current flows through the resistor if the resistance is 1.12 kOhms
An LTIC system is specified by the equation ( D2 +5D + 6) y (t) = ( D + 1) x (t) . (a) Find the characteristic polynomial, characteristic equation, characteristic roots, and characteristic modes for this system.
A 200 nm oxide film is deposited on a 500 m thick bare silicon wafer that has a radius of curvature of 300 m. After deposition, the radius is measured to be 200 m. A 600 nm nitride film is now deposited on the oxide
you are asked to determine the signal-to-interference ratio sir or ci on the forward link of a cellular system when
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