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Consider a diode with n=1 which biased at 2mA. Find the change incurrents as a result of changing the voltage by (a) -10mv (b) +5mv(c) +10mv , using small signal model and exponential model
Given that KG =.0894, w=15.4, φ=-125 degrees and G(s) = [520(s+2)]/[s2(s+30)] design a compensator that gives a PM of 90 degrees and does not change the open loop bandwidth.
For each of the discrete signals below, determine mathematically whether the signal is even, odd, or neither. (a) x[n]=6u[n-3] (b) x[n]=-n (c) x[n]=sin(n-(pi/6))
The first element is located at the origin and the magnitude of the current on each element is: Element 1: i1=d1 (at z=0), Element 2: i2=d2 (at z = quarter wavelength), Element 3: i3=d3 (at z=half wavelength), Element 4: i4=d4
Design low pass active filter with a cutoff frequency t at 10kHz or more by 30db and have the pass band gain positive that does not deviate from 20db by more than 3db. The pass band frequency needed is 800Hz and below Derive transfer function
Find the intrinsic gain of an NMOS transistor fabricated in a process for which k'n=200uA/V^2 and V'A=20Vum. The transistor has a 0.5-um channel length and is operated at Vov = 0.25. If a 2-mA/V transconductance is required, what must Id and W be
The surface concentration is fixed at N0=1.8e20/cm^2 when diffusing boron into a uniformly doped n-type substrate. The atomic diffusion constant for boron in Si at the temperature of 950 C is 3.0e-15 cm^2/s.
Draw a circuit that shifts cyclically a register to left or toright ans is also able to preserve this register's state. Given aretwo controls C1 and C2 that select any of these three operations.use only NOT, AND and OR gates and D type flip flop.
As more and more memory is squeezed onto a single chip, the numberof pins needed to address it also increases. It is often inconvenient to have large numbers of address pins on a chip. Devise a way to address 2^n words of memory using fewer than n..
Write an optimal sequence of control microinstruction
In a 120V compound generator, the resistances of the armature shunt and series windings are 0.06 ohm, 25 Ohm, and 0.04 Ohm respectively. The load current is 100A at 120V, find the induced EMF and the armature current of the generator.
The charge is release from rest and accelerate through a potential difference of 100000v. (a) Find the speed of the sphere after the acceleration. (b) if the sphere (which is already up to its max)is fired directly at a fixed (can't move) charge q..
A four-bit binary number is represented as A3A2A1A0, where A3, A2, A1, and A0 represent the individual bits and A0 is equal to the LSB. Design a logic circuit that will produce HIGH output whenever the binary number is greater than 0010 and less t..
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