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A piece of metal with a work function of 4.3 eV forms a Schottky junction with a piece of Si that has an electron affinity of 4.0 eV. Please answer the following questions:
(1) Suppose silicon is doped with phosphorus at a concentration of 1017 cm-3, please find the built-in potential, depletion region width (4 points), Schottky barrier height and quantitatively plot the energy band diagram of the Schottky junction.
(2) If the built-in potential is zero, how should we choose the phosphorus doping concentration?
(3) Suppose silicon is doped with boron at a concentration of 1017 cm-3 (irrelative to (1) and (2)), please find the built-in potential, Schottky barrier height and quantitatively plot the energy band diagram of the Schottky junction.
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