Find quasi-fermi levels for injected carrier concentration

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Reference no: EM13274274

A semiconductor laser diode has the following gain characteristics:

g(E)= 3000 * sqrt(E-Eg)(fc-fv)

where all photon energy E and bandgap energy Eg are both in eV. fc and fv are Fermi functions for electrons and holes with respect to their respective quasi-Fermi levels.

Assuming the material is GaAs, calculate the Quasi-Fermi levels if the injected carrier concentration is 2x1018 cm-3.You can use the effective mass approximation and consider only the heavy hole in the valence band.

Calculate and plot g(E) at 200K and 300K over the photon energy from Eg to Eg+0.5eV.

Reference no: EM13274274

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