Find position of fermi level with respect to ei in si

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Reference no: EM13257635

Given: Si is doped with boron atoms; concentration of boron atoms is 1014 cm-3.

· Find: carrier concentration in Si at T = 300 K. (Hint: use Principle of Space Charge Neutrality)

· Find: Ei - position of Fermi level in intrinsic Si at T = 300 K.

· Find: (EF - Ei) - position of Fermi level with respect to Ei in the given boron-doped Si at T = 300 K.

Reference no: EM13257635

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