Explain why sio2 grows on both sides

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In a reactor used for epitaxial growth, the wafers are normally placed flat on the susceptor, and epi grows on the top side only.

If the same reactor were used to oxidize wafers, by introducing O2 rather than SiH1 (or another Si gas source), SiO2 would grow on both sides of the wafer.

Explain why SiO2 grows on both sides and epi grows only on the top side.

Reference no: EM131794379

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