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Construct a horizontal line on your I versus V graph at the point I = 1 mA. This line will intersect each of the sloping lines at two separate points. Explain the significance of each of these intersections
Consider a linearly graded Si p-n junction. Find a relation for the potential across the depletion region. Hint: Start from equation 29 in chapter 3 of the text book. Integrate the electric field to find the potential.
1-mH inductor carries a current: i(t)=50*t^2*exp(-2*t) inunit of mA. Determine the voltage, power, and energy of the inductor as a function of time.
A 2000 hp, 1.0 power factor three phase Y connected 2300V, 30 Pole, 60Hz; synchronous motor has a synchronous reactance of 1.95 ohms/phase. For this problem all losses may be neglected.
The surface concentration is fixed at N0=1.8e20/cm^2 when diffusing boron into a uniformly doped n-type substrate. The atomic diffusion constant for boron in Si at the temperature of 950 C is 3.0e-15 cm^2/s.
A constellation diagram has four points located at (2,2), (-2,2), (-2, -2), and (2, -2) on the I(in-phase)-Q(quadrature phase) plane. Find the value of peak amplitude and the type of modulation this diagram represents.
The signal transmitted by a Base Station has a power of 1 mW at a distance of 1 m from the transmitter. Measurements have shown that the propagation exponent for the path loss is n=3 up to a distance of 1 km and n=4 beyond that.
A p-type wafer has a diffused Phosphorous n-type junction with a junction depth of 0.15µm. a) If the wafer (no pre-existing oxide) is to be oxidized at 1000-oC for two hours to form a ‘dense, non-porous, high-quality' gate oxide.
A separately excited DC generator,when running at 1200 RPM, supplies 200A at 125V to a circuit ofconstant resistance. What will the current be when the speed is dropped to 1000 RPM if the field current remains unchanged
Project on LFC using tuned FOPID. I have considered a two area model. Need help regarding implementation of GA MATLAB code for a two area interconnected power system for LOAD FREQUENCY CONTROL.
Create the layout design for MOS inverter using a depletion-type transistor with VTL = -0.3V and an enhancement-type device with VTO = 0.5V such that tPLH is less than or equal to 15ns and tPHL is less than or equal to 1ns
In the "far field" region, show that the electric field intensity of a linear electric quadrupole decays much faster in space than 1/R3 for the electric field intensity produced by an electric dipole and 1/R2 for an electric monopole.
Design a 3-stage MOSFET amplifier that provides a differential gain |vo/vd| > 20V/V, a small common-mode gain, and an output resistance Ro >1kΩ. The amplifier is to drive a load RL = 10kΩ. The frequency of the signal source is 10 kHz.
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