Explain diffusion of dopant element a into crystalline wafer

Reference no: EM13565553

Consider the diffusion of dopant element A into crystalline wafer. The dopant rich coating is considered as a large source of A relevant to the amount of A diffused, so that the surface concentration CAs can be considered a constant. Determine the depth (z) of the front of diffusing dopant after two hours of diffusion. Assume that the front concentration is 2% of the surface concentration. Diffusivity of A= 6.5 X 10^-13 cm^2/s.

Reference no: EM13565553

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