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An NMOS pass-transistor switch with W/L= 1.2 um / 0.8 um. used in a 3.3-V system for which Vt0 = 0.8 V,(lambda)= 0.5 V^(1/2), 2(phi)f= 0.6 V , unCox = 3upCox = 75 uA/V^2, drives a 100-fF load capacitance at the input of a matched standard CMOS inverter using (W/L)n = 1.2 um ? 0.8 um. For the switch gate terminal at VDD, evaluate the switch VOH and VOL for inputs at VDD and 0 V, respectively.For this value of VOH, what inverter static current results? Estimate tPLH and tPHL for this arrangement as measured from the input to the output of the switch itself.
Determine the values of the lumped parasitic capacitor and inductor in a 5 ft long two-wire transmission line with air dielectric Each wire has a diameter of 1 mm and the separation between the wires is 1 inch.
Implement the truth table shown below using the minimum number of NAND gates. Use 2-, 3- , and/or 4-input NAND gates as required to minimize gates. Develop a logic circuit, using only NAND gates, to implement a circuit.
A solid sphere with a radius of 75 mm rolls (without slipping) down an inclined plane that is 5 m long. What is the angular velocity of the sphere at the bottom of the plane if it requires 10 seconds for it to reach the bottom
Calculate the converter voltage VC1, reactive power, the converter phase current and modulation index.
1) What are some practical op-amp applications Can you give example and explain why the bop-amp was used in your example 2) What is the most common used op-amp in the industry
What is the maximum power dissipated in the load when the Thévenin voltage is 17 V cos(37 rad/s t + 24°), the Thévenin impedance is 127 -j 182-ohm and the load impedance is 127 + j 182-ohm
If a silicon diffusion is doped with phosphorus (donors) at a concentration of 0.6 x 10^17/cm^3, what is the concentration of holes in this piece of silicon per cm^3 Assume ni = 1.45 x 10^10/cm^3, n = 1000 cm^2/V-s, p = 400 cm^2/V-s
Tune PI Parameters, Question: Given are the facts that Gc and Gp(s) are in series and Gp(s) = (K * Km) / [s[(Ls+R)(Js+b) + K^2m)]].
A Widlar Current Source is designed to limit the load current to the reference current by using a resistor at the emitter end by:I(load)*R(Emitter)=Vt ln (I(ref)/I(load))=VBE(Ref)-VBE(Load)
Find the characteristics equation and the corresponding roots for the following ODEs and identify its case a) y" + 6Y' + 9y=0 b) 10y" + 18y' +5.6y=0 c) 10y" + 50y' + 65y =0 Slove the intial value problem a) problem 2a) with y(0)=2 and y'(0)=-5
Lithium chloride crystallizes in a face-centered cubic structure. The unit cell length is 5.14 10-8 cm. The chloride ions are touching each other along the face diagonal of the unit cell. The lithium ions fit into the holes between the chloride io..
Design, simulate and program a 4-bit, 8-function ALU to implement the operations F2 F1 F0 Output Function S0 - S4 0 0 0 Output = A Input S = A 0 0 1 Output = A Complement S = NOT A 0 1 0 Output = A Plus B S = A + B0 1 1 Output = A Minus B S = A - B
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